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document number: 65281 www.vishay.com s09-2019-rev. b, 05-oct-09 1 n- and p-channel 12 v (d-s) mosfet SMMA511DJ vishay siliconix new product features ? high quality manufacturing process using smm process flow ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfets ? new thermally enhanced powerpak ? sc-70 package - small footprint area - low on-resistance ? compliant to rohs directive 2002/95/ec ? find out more about vishay?s medical products at: www.vishay.com/medical-mosfets application examples ? medical implantable applications including - drug delivery systems - defibrillators - pacemakers - hearing aids - other implantable devices ? load switch for portable devices product summary n-channel p-channel v ds (v) 12 - 12 r ds(on) ( ) at v gs = 4.5 v 0.040 0.070 r ds(on) ( ) at v gs = 2.5 v 0.048 0.100 r ds(on) ( ) at v gs = 1.8 v 0.063 0.140 i d (a) a 4.5 - 4.5 configuration n- and p-pair n-channel mosfet g 1 d 1 s 1 s 2 g 2 d 2 p-channel mosfet s 1 d 1 g 2 s 2 g 1 d 2 1 6 5 4 2 3 2.05 mm 2.05 mm powerpak sc-70-6 dual d 1 d 2 markin g code x x x m a x lot tracea b ility a n d d a t e c o de part # code ordering information package powerpak sc-70 lead (pb)-free and halogen-free SMMA511DJ-t1-ge3 absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol n-channel p-channel unit drain-source voltage v ds 12 - 12 v gate-source voltage v gs 8 8 continuous drain current (t j = 150 c) t c = 25 c a i d 4.5 - 4.5 a t c = 70 c a 4.5 - 4.5 t a = 25 c a, b, c 4.5 - 4.3 t a = 70 c a, b, c 4.5 - 3.4 pulsed drain current i dm 20 - 10 continuous source-drain diode current t c = 25 c a i s 4.5 - 4.5 t a = 25 c b, c 1.6 - 1.6 maximum power dissipation t c = 25 c p d 6.5 6.5 w t c = 70 c 5 5 t a = 25 c a, c 1.9 1.9 t a = 70 c a, c 1.2 1.2 operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (peak temperature) d, e 260
www.vishay.com document number: 65281 2 s09-2019-rev. b, 05-oct-09 SMMA511DJ vishay siliconix new product notes a. surface mounted on 1" x 1" fr4 board. b. package limit is 4.5 a. c. t = 5 s. d. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak sc-70 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the si ngulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual solder ing with a soldering iron is not recommended for leadless components. f. maximum under steady state conditions is 110 c/w. thermal resistance ratings parameter symbol n-channel p-channel unit typ. max. typ. max. maximum junction-to-ambient b, f t 5 s r thja 52 65 52 65 c/w maximum junction-to-case (drain) steady state r thjc 12.5 16 12.5 16 specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a n-ch 12 - - v v gs = 0 v, i d = - 250 a p-ch - 12 - - v ds temperature coefficient v ds /t j i d = 250 a n-ch - 12 - mv/c i d = - 250 a p-ch - - 7 - v gs(th) temperature coefficient v gs(th) /t j i d = 250 a n-ch - - 2.8 - i d = - 250 a p-ch - 2.1 - gate threshold voltage v gs(th) v ds = v gs , i d = 250 a n-ch 0.4 - 1 v v ds = v gs , i d = - 250 a p-ch - 0.4 - - 1 gate-body leakage i gss v ds = 0 v, v gs = 8 v n-ch - - 100 na p-ch - - 100 zero gate voltage drain current i dss v gs = 0 v v ds = 12 v n-ch - - 1 a v gs = 0 v v ds = - 12 v p-ch - - - 1 v gs = 0 v v ds = 12 v, t j = 55 c n-ch - - 10 v gs = 0 v v ds = - 12 v, t j = 55 c p-ch - - - 10 on-state drain current a i d(on) v gs = 4.5 v v ds 5 v n-ch 15 - - a v gs = - 4.5 v v ds - 5 v p-ch - 8 - - drain-source on-state resistance a r ds(on) v gs = 4.5 v i d = 4.2 a n-ch - 0.033 0.040 v gs = - 4.5 v i d = - 3.3 a p-ch - 0.058 0.070 v gs = 2.5 v i d = 3.8 a n-ch - 0.039 0.048 v gs = - 2.5 v i d = - 2.8 a p-ch - 0.082 0.100 v gs = 1.8 v i d = 1.6 a n-ch - 0.051 0.063 v gs = - 1.8 v i d = - 0.7 a p-ch - 0.111 0.140 forward transconductance a g fs v ds = 10 v, i d = 4.2 a n-ch - 13 - s v ds = - 10 v, i d = - 3.3 a p-ch - 9 - dynamic b input capacitance c iss v gs = 0 v n-channel v ds = 6 v, f = 1 mhz p-channel v ds = - 6 v, f = 1 mhz n-ch - 400 - pf p-ch - 400 - output capacitance c oss n-ch - 120 - p-ch - 140 - reverse transfer capacitance c rss n-ch - 70 - p-ch - 100 -
document number: 65281 www.vishay.com s09-2019-rev. b, 05-oct-09 3 SMMA511DJ vishay siliconix new product notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. dynamic b total gate charge q g v gs = 8 v v ds = 6 v, i d = 5.5 a n-ch - 7.5 12 nc v gs = - 8 v v ds = - 6 v, i d = - 4.3 a p-ch - 8 12 v gs = 4.5 v n-channel v ds = 6 v, i d = 5.5 a p-channel v ds = - 6 v, i d = - 4.3 a n-ch - 4.5 6.8 v gs = - 4.5 v p-ch - 5 7.5 gate-source charge q gs v gs = 4.5 v n-ch - 0.6 - v gs = - 4.5 v p-ch - 0.8 - gate-drain charge q gd v gs = 4.5 v n-ch - 0.8 - v gs = - 4.5 v p-ch - 1.4 - gate resistance r g f = 1 mhz n-ch - 2.5 - p-ch - 7 - turn-on delay time t d(on) n-channel v dd = 6 v, r l = 1.4 i d ? 4.4 a, v gen = 4.5 v, r g = 1 p-channel v dd = - 6 v, r l = 1.8 i d ? - 3.4 a, v gen = - 4.5 v, r g = 1 n-ch - 5 10 ns p-ch - 15 25 rise time t r n-ch - 15 25 p-ch - 25 40 turn-off delay time t d(off) n-ch - 35 55 p-ch - 20 30 fall time t f n-ch - 15 25 p-ch - 10 15 turn-on delay time t d(on) n-channel v dd = 6 v, r l = 1.4 i d ? 4.4 a, v gen = 10 v, r g = 1 p-channel v dd = - 6 v, r l = 1.8 i d ? - 3.4 a, v gen = - 10 v, r g = 1 n-ch - 5 10 p-ch - 5 10 rise time t r n-ch - 10 15 p-ch - 12 20 turn-off delay time t d(off) n-ch - 15 25 p-ch - 20 30 fall time t f n-ch - 10 15 p-ch - 10 15 source-drain body diode characteristics continuous source-drain diode current i s t c = 25 c n-ch - - 4.5 a p-ch - - - 4.5 pulse diode forward current i sm n-ch - - 20 p-ch - - - 10 body diode voltage v sd v gs = 0 v i s = 4.4 a n-ch - 0.8 1.2 v i s = - 3.4 a p-ch - - 0.8 - 1.2 body diode reverse recovery time t rr n-channel i f = 4.4 a, di/dt = 100 a/s, t j = 25 c p-channel i f = - 3.4 a, di/dt = - 100 a/s, t j = 25 c n-ch - 15 30 ns p-ch - 30 60 body diode reverse recovery charge q rr n-ch - 8 20 nc p-ch - 12 24 reverse recovery fall time t a n-ch - 8.5 - ns p-ch - 14 - reverse recovery rise time t b n-ch - 8.5 - p-ch - 16 - specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit
www.vishay.com document number: 65281 4 s09-2019-rev. b, 05-oct-09 SMMA511DJ vishay siliconix new product n-channel typical characteristics t a = 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 0.0 0.4 0. 8 1.2 1.6 2.0 v ds - drain-to-so u rce v oltage ( v ) v gs = 5 v thr u 2.5 v - drain c u rrent (a) i d v gs = 2 v v gs = 1.5 v v gs = 1 v 0.03 0.04 0.05 0.06 0.07 0.0 8 0.09 0.10 04 8 12 16 20 i d - drain c u rrent (a) - on-resistance ( ) r ds(on) v gs = 1. 8 v v gs = 4.5 v v gs = 2.5 v 0 2 4 6 8 0246 8 q g - total gate charge (nc) i d = 5.5 a - gate-to-so u rce v oltage ( v ) v gs v ds = 9.6 v v ds = 6 v v gs - gate-to-so u rce v oltage ( v ) 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 t c = 25 c - drain c u rrent (a) i d t c = 125 c t c = - 55 c c rss v ds - drain-to-so u rce v oltage ( v ) 0 100 200 300 400 500 600 036912 c oss c iss c - capacitance (pf) t j - j u nction temperat u re (c) 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 - 50 - 25 0 25 50 75 100 125 150 r ds(on) - on-resistance ( n ormalized) v gs = 4.5 v , 2.5 v , 1. 8 v , i d = 4.2 a
document number: 65281 www.vishay.com s09-2019-rev. b, 05-oct-09 5 SMMA511DJ vishay siliconix new product n-channel typical characteristics t a = 25 c, unless otherwise noted soure-drain diode forward voltage threshold voltage on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient safe operating area, junction-to-ambient 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 150 c v sd - so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0.1 1 10 t j = 25 c 100 t j - temperat u re (c) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) v gs - gate-to-so u rce v oltage ( v ) 0.02 0.04 0.06 0.0 8 0.10 0.12 012345 i d = 4.2 a, 25 c - on-resistance ( ) r ds(on) i d = 4.2 a, 125 c 1000 100 1 0.001 0.01 0.1 10 po w er ( w ) p u lse (s) 20 10 5 15 0 100 1 0.1 1 10 100 0.01 10 1 ms - drain c u rrent (a) i d 0.1 t a = 25 c single p u lse 10 ms 100 ms dc 1 s 10 s v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified limited b y r ds(on) * 100 s b v dss limited
www.vishay.com document number: 65281 6 s09-2019-rev. b, 05-oct-09 SMMA511DJ vishay siliconix new product n-channel typical characteristics t a = 25 c, unless otherwise noted current derating* power derating * the power dissipation p d is based on t j(max.) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. 0 2 4 6 8 10 12 14 0 25 50 75 100 125 150 i d - drain c u rrent (a) t c - case temperat u re (c) package limited 0 2 4 6 8 25 50 75 100 125 150 t c - case temperat u re (c) po w er dissipation ( w )
document number: 65281 www.vishay.com s09-2019-rev. b, 05-oct-09 7 SMMA511DJ vishay siliconix new product n-channel typical characteristics t a = 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case 1 0.1 0.01 normalized ef fective t ransient thermal impedance 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 square wave pulse duration (s) single pulse 0.02 0.05 0.1 0.2 duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r th ja = 85 c/w 3. t jm - t a = p dm z th ja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 -3 10 -2 10 -1 10 -4 1 0.01 square wave pulse duration (s) normalized e f f ective t ransient thermal impedance duty cycle = 0.5 0.2 0.1 single pulse 0.02 0.05
www.vishay.com document number: 65281 8 s09-2019-rev. b, 05-oct-09 SMMA511DJ vishay siliconix new product p-channel typical characteristics t a = 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge transfer characteristics capacitance on-resistance vs. junction temperature v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 2 4 6 8 10 0.0 0.4 0. 8 1.2 1.6 2.0 v gs = 5 v thr u 2.5 v v gs = 1.5 v v gs = 2 v 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0246 8 10 i d - drain c u rrent (a) - on-resistance ( ) r ds(on) v gs = 2.5 v v gs = 1. 8 v v gs = 4.5 v 0 2 4 6 8 0246 8 q g - total gate charge (nc) - gate-to-so u rce v oltage ( v ) v gs v ds = 6 v v ds = 9.6 v i d = 4.3 a v gs - gate-to-so u rce v oltage ( v ) 0.0 0.4 0. 8 1.2 1.6 2.0 0.0 0.3 0.6 0.9 1.2 1.5 t c = 25 c - drain c u rrent (a) i d t c = 125 c t c = - 55 c v ds - drain-to-so u rce v oltage ( v ) 0 100 200 300 400 500 600 700 0246 8 10 12 c iss c - capacitance (pf) c oss c rss t j - j u nction temperat u re (c) 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 r ds(on) - on-resistance ( n ormalized) i d = 3.3 a v gs = 4.5 v , 2.5 v , 1. 8 v
document number: 65281 www.vishay.com s09-2019-rev. b, 05-oct-09 9 SMMA511DJ vishay siliconix new product p-channel typical characteristics t a = 25 c, unless otherwise noted soure-drain diode forward voltage threshold voltage on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient safe operating area, junction-to-ambient 0.1 1 10 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 150 c v sd - so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s t j = 25 c t j - temperat u re (c) 0.3 0.4 0.5 0.6 0.7 0. 8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) v gs - gate-to-so u rce v oltage ( v ) 0.00 0.05 0.10 0.15 0.20 012345 - on-resistance ( ) r ds(on) i d = 3.3 a 125 c 25 c 1000 100 1 0.001 0.01 0.1 10 po w er ( w ) p u lse (s) 20 10 5 15 0 v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d 10 0.1 0.1 1 10 1 t a = 25 c single p u lse 1 ms 10 ms 100 ms 0.01 1 s 10 s dc b v dss limited 100 100 s limited b y r ds(on) *
www.vishay.com document number: 65281 10 s09-2019-rev. b, 05-oct-09 SMMA511DJ vishay siliconix new product p-channel typical characteristics t a = 25 c, unless otherwise noted current derating* power derating * the power dissipation p d is based on t j(max.) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. 0 2 4 6 8 10 0 25 50 75 100 125 150 i d - drain c u rrent (a) t c - case temperat u re (c) package limited 0 2 4 6 8 25 50 75 100 125 150 t c - case temperat u re (c) po w er dissipation ( w )
document number: 65281 www.vishay.com s09-2019-rev. b, 05-oct-09 11 SMMA511DJ vishay siliconix new product p-channel typical characteristics t a = 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65281 . 1 0.1 0.01 normalized ef fective t ransient thermal impedance 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 square wave pulse duration (s) single pulse 0.02 0.05 0.1 0.2 duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r th ja = 85 c/w 3. t jm - t a = p dm z th ja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 -3 10 -2 10 -1 10 -4 1 0.01 square wave pulse duration (s) normalized e f f ective t ransient thermal impedance duty cycle = 0.5 0.2 0.1 single pulse 0.02 0.05
vishay siliconix package information document number: 73001 06-aug-07 www.vishay.com 1 powerpak ? sc70-6l dim single pad dual pad millimeters inches millimeters inches min nom max min nom max min nom max min nom max a 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 a1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 c 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 d 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 d1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 d2 0.135 0.235 0.335 0.005 0.009 0.013 e 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 e1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 e2 0.345 0.395 0.445 0.014 0.016 0.018 e3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 bsc 0.026 bsc 0.65 bsc 0.026 bsc k 0.275 typ 0.011 typ 0.275 typ 0.011 typ k1 0.400 typ 0.016 typ 0.320 typ 0.013 typ k2 0.240 typ 0.009 typ 0.252 typ 0.010 typ k3 0.225 typ 0.009 typ k4 0.355 typ 0.014 typ l 0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 t 0.05 0.10 0.15 0.002 0.004 0.006 ecn: c-07431 ? rev. c, 06-aug-07 dwg: 5934 e2 back s ide view of s ingle back s ide view of dual note s : 1. all dimen s ion s a re in millimeter s 2. p a ck a ge o u tline excl us ive of mold fl as h a nd met a l bu rr 3 . p a ck a ge o u tline incl us ive of pl a ting pin1 pin6 pin5 pin4 pin2 pin 3 a z detail z z d e k1 k2 c a1 k 3 k2 k2 e b b e pin6 pin5 pin4 pin1 pin 3 pin2 e1 e1 e1 l l k4 k k k d1 d2 d1 d1 k1 e 3
application note 826 vishay siliconix www.vishay.com document number: 70487 12 revision: 21-jan-08 application note recommended pad layout for powerpak ? sc70-6l dual 1 2.500 (0.098) 0.350 (0.014) 2.275 (0.011) 0.613 (0.024) 0.300 (0.012) 0.325 (0.013) 0.950 (0.037) 0.475 (0.019) 2.500 (0.098) 0.275 (0.011) 0.160 (0.006) 1.600 (0.063) dimensions in mm/(inches) 0.650 (0.026) return to index
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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